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Transistors(61)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GA10JT12-247 | - |  |
9924 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | 175°C (TJ) | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | TO-247AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | - | 1200 V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | 170W (Tc) |
2000+
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