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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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GP3D010A065A | 2.5492 | ![]() |
6628 | 0.00000000 | SemiQ | Amp+™ | Tube | Active | Through Hole | TO-220-2 | GP3D010 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 10 A | 0 ns | 25 µA @ 650 V | -55°C ~ 175°C | 10A | 419pF @ 1V, 1MHz | ||||||||||||||||
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GSXD030A004S1-D3 | - | ![]() |
7460 | 0.00000000 | SemiQ | - | Tube | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | GSXD030 | Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 45 V | 30A | 700 mV @ 30 A | 1 mA @ 45 V | -40°C ~ 150°C | |||||||||||||||||
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GP3D020A065B | 6.2800 | ![]() |
171 | 0.00000000 | SemiQ | Amp+™ | Tube | Active | Through Hole | TO-247-2 | GP3D020 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 20A | 835pF @ 1V, 1MHz | ||||||||||||||||
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GP2D020A120B | - | ![]() |
4576 | 0.00000000 | SemiQ | Amp+™ | Tube | Discontinued at SIC | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | 1560-1052-5 | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 20 A | 0 ns | 40 µA @ 1200 V | -55°C ~ 175°C | 20A | 1270pF @ 1V, 1MHz | ||||||||||||||||
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GP2D010A065A | - | ![]() |
5454 | 0.00000000 | SemiQ | Amp+™ | Tube | Discontinued at SIC | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.65 V @ 10 A | 100 µA @ 650 V | -55°C ~ 175°C | 10A | 527pF @ 1V, 1MHz | |||||||||||||||||||
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GSXD060A010S1-D3 | 33.2649 | ![]() |
6688 | 0.00000000 | SemiQ | - | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GSXD060 | Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 13 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 100 V | 60A | 840 mV @ 60 A | 1 mA @ 100 V | -40°C ~ 150°C | |||||||||||||||||
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GSXD080A012S1-D3 | 34.6525 | ![]() |
3974 | 0.00000000 | SemiQ | - | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GSXD080 | Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 13 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 120 V | 80A | 880 mV @ 80 A | 3 mA @ 120 V | -40°C ~ 150°C | |||||||||||||||||
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GSXF030A060S1-D3 | - | ![]() |
3434 | 0.00000000 | SemiQ | - | Tube | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | GSXF030 | Standard | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | GSXF030A060S1D3 | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 600 V | 30A | 1.5 V @ 30 A | 60 ns | 25 µA @ 600 V | -55°C ~ 175°C | |||||||||||||||
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GP3D010A170B | 8.5100 | ![]() |
17 | 0.00000000 | SemiQ | Amp+™ | Tube | Active | Through Hole | TO-247-2 | GP3D010 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.65 V @ 10 A | 0 ns | 40 µA @ 1700 V | -55°C ~ 175°C | 67A | 699pF @ 1V, 1MHz | ||||||||||||||||
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GHXS060B120S-D3 | 98.5800 | ![]() |
48 | 0.00000000 | SemiQ | - | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GHXS060 | SiC (Silicon Carbide) Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | 1560-GHXS060B120S-D3 | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1200 V | 161A | 1.7 V @ 60 A | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | |||||||||||||||
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GCMS040B120S1-E1 | 34.8800 | ![]() |
6 | 0.00000000 | SemiQ | - | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | GCMS040 | SiC (Silicon Carbide Junction Transistor) | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | 1560-GCMS040B120S1-E1 | EAR99 | 8541.29.0095 | 10 | N-Channel | 1200 V | 57A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 124 nC @ 20 V | +25V, -10V | 3110 pF @ 1000 V | - | 242W (Tc) |
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