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Discrete Semiconductor Products(87)

Product Number	Pricing(USD)	Quantity	Quantity Available	Mfr	Series	Package	Product Status	Operating Temperature	Mounting Type	Package / Case	Base Product Number	Technology	Power - Max	Supplier Device Package	DataSheet	RoHS Status	REACH Status	Other Names	ECCN	HTSUS	Standard Package	Configuration	Speed	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Current - Average Rectified (Io)	Capacitance @ Vr, F
P3D06004G2	2.1000	RFQ	6325	PN Junction Semiconductor	P3D	Tape & Reel (TR)	Active			TO-263-2		SiC (Silicon Carbide) Schottky		TO-263-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06004G2TR			1		No Recovery Time > 500mA (Io)												650 V		0 ns	20 µA @ 650 V	-55°C ~ 175°C	14A
P3M12017K4	39.7500	RFQ	7138	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M12017K4			1			N-Channel	1200 V	151A	15V	24mOhm @ 75A, 15V	2.5V @ 75mA (Typ)		+25V, -10V		-	789W
P3D12020K2	12.4100	RFQ	5644	PN Junction Semiconductor	P3D	Tube	Active			TO-247-2		SiC (Silicon Carbide) Schottky		TO-247-2	download	ROHS3 Compliant	REACH Affected	4237-P3D12020K2			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	60 µA @ 650 V	-55°C ~ 175°C	51A
PAA12400BM3	882.3600	RFQ	3564	PN Junction Semiconductor	-	Tray	Active	-40°C ~ 175°C (TJ)	Chassis Mount	Module	PAA12400	Silicon Carbide (SiC)	-	Module	download	ROHS3 Compliant	REACH Affected	4237-PAA12400BM3			1	2 N-Channel (Half Bridge)			1200V (1.2kV)	350A		7.3mOhm @ 300A, 20V	5V @ 100mA	-		29.5pF @ 1000V	-
P3M12080G7	11.9000	RFQ	1610	PN Junction Semiconductor	P3M	Tape & Reel (TR)	Active	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA		SiCFET (Silicon Carbide)		D2PAK-7	download	ROHS3 Compliant	REACH Affected	4237-P3M12080G7TR			1			N-Channel	1200 V	32A	15V	96mOhm @ 20A, 15V	2.2V @ 30mA (Typ)		+19V, -8V		-	136W
P3M12040K4	20.9800	RFQ	2699	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M12040K4			1			N-Channel	1200 V	63A	15V	48mOhm @ 40A, 15V	2.2V @ 40mA (Typ)		+21V, -8V		-	349W
P3D06020I2	8.8400	RFQ	9682	PN Junction Semiconductor	P3D	Tube	Active			TO-220I-2		SiC (Silicon Carbide) Schottky		TO-220I-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06020I2			1		No Recovery Time > 500mA (Io)												650 V		0 ns	50 µA @ 650 V	-55°C ~ 175°C	35A
P3D12010K3	6.5400	RFQ	3747	PN Junction Semiconductor	P3D	Tube	Active			TO-247-3		SiC (Silicon Carbide) Schottky		TO-247-3	download	ROHS3 Compliant	REACH Affected	4237-P3D12010K3			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	44 µA @ 650 V	-55°C ~ 175°C	46A
P1H06300D8	4.9800	RFQ	7689	PN Junction Semiconductor	-	Tape & Reel (TR)	Active	-55°C ~ 150°C (TJ)	Surface Mount			GaNFET (Gallium Nitride)		DFN8*8	download	ROHS3 Compliant	REACH Affected	4237-P1H06300D8TR			1			N-Channel	650 V	10A	6V	-			+10V, -20V		-	55.5W
P3M06120K4	9.0500	RFQ	2705	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M06120K4			1			N-Channel	650 V	27A	15V	158mOhm @ 10A, 15V	2.2V @ 5mA		+20V, -8V		-	131W
P3D12020G2	12.4100	RFQ	4772	PN Junction Semiconductor	P3D	Tape & Reel (TR)	Active			TO-263-2		SiC (Silicon Carbide) Schottky		TO-263-2	download	ROHS3 Compliant	REACH Affected	4237-P3D12020G2TR			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	60 µA @ 650 V	-55°C ~ 175°C	49A
P3D12020K3	12.4100	RFQ	1272	PN Junction Semiconductor	P3D	Tube	Active			TO-247-3		SiC (Silicon Carbide) Schottky		TO-247-3	download	ROHS3 Compliant	REACH Affected	4237-P3D12020K3			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	50 µA @ 650 V	-55°C ~ 175°C	70A
P3M171K2K3	5.5900	RFQ	2230	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3		SiCFET (Silicon Carbide)		TO-247-3L	download	ROHS3 Compliant	REACH Affected	4237-P3M171K2K3			1			N-Channel	1700 V	6A	15V	1.4Ohm @ 2A, 15V	2.2V @ 2mA (Typ)		+19V, -8V		-	68W
P3M07013K4	33.9000	RFQ	4850	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M07013K4			1			N-Channel	750 V	140A	15V	16mOhm @ 75A, 15V	2.2V @ 75mA (Typ)		+19V, -8V		-	428W
P3D06002T2	2.1000	RFQ	5217	PN Junction Semiconductor	P3D	Tube	Active			TO-220-2		SiC (Silicon Carbide) Schottky		TO-220-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06002T2			1		No Recovery Time > 500mA (Io)												650 V		0 ns	10 µA @ 650 V	-55°C ~ 175°C	6A
P3M12040K3	20.9800	RFQ	8887	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3		SiCFET (Silicon Carbide)		TO-247-3L	download	ROHS3 Compliant	REACH Affected	4237-P3M12040K3	EAR99	8541.29.0095	1			N-Channel	1200 V	63A	15V	48mOhm @ 40A, 15V	2.2V @ 40mA (Typ)		+21V, -8V		-	349W
P3D12005K2	4.5000	RFQ	6239	PN Junction Semiconductor	P3D	Tube	Active			TO-247-2		SiC (Silicon Carbide) Schottky		TO-247-2	download	ROHS3 Compliant	REACH Affected	4237-P3D12005K2			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	44 µA @ 650 V	-55°C ~ 175°C	23A
P3D06020T2	8.8400	RFQ	2609	PN Junction Semiconductor	P3D	Tube	Active		-	TO-220-2		SiC (Silicon Carbide) Schottky		TO-220-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06020T2			1		No Recovery Time > 500mA (Io)												650 V	1.6 V @ 20 A	0 ns	100 µA @ 650 V	-55°C ~ 175°C	45A	904pF @ 0V, 1MHz
P3M06120K3	9.0500	RFQ	6996	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3		SiCFET (Silicon Carbide)		TO-247-3L	download	ROHS3 Compliant	REACH Affected	4237-P3M06120K3			1			N-Channel	650 V	27A	15V	158mOhm @ 10A, 15V	2.2V @ 5mA		+20V, -8V		-	131W
P3D06008E2	3.3300	RFQ	2523	PN Junction Semiconductor	P3D	Tape & Reel (TR)	Active			TO-252-2		SiC (Silicon Carbide) Schottky		TO-252-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06008E2TR	EAR99	8541.10.0080	1		No Recovery Time > 500mA (Io)												650 V		0 ns	36 µA @ 650 V	-55°C ~ 175°C	22A
P3M12080K4	11.9000	RFQ	9034	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M12080K4			1			N-Channel	1200 V	47A	15V	96mOhm @ 20A, 15V	2.4V @ 5mA (Typ)		+21V, -8V		-	221W
P3D06006T2	2.5000	RFQ	2115	PN Junction Semiconductor	P3D	Tube	Active			TO-220-2		SiC (Silicon Carbide) Schottky		TO-220-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06006T2			1		No Recovery Time > 500mA (Io)												650 V		0 ns	30 µA @ 650 V	-55°C ~ 175°C	23A
P6D12002E2	2.6900	RFQ	9835	PN Junction Semiconductor	P6D	Tape & Reel (TR)	Active			TO-252-2		SiC (Silicon Carbide) Schottky		TO-252-2	download	ROHS3 Compliant	REACH Affected	4237-P6D12002E2TR			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	50 µA @ 650 V	-55°C ~ 175°C	8A
P3D06008F2	3.3300	RFQ	6959	PN Junction Semiconductor	P3D	Tube	Active			TO-220F-2		SiC (Silicon Carbide) Schottky		TO-220F-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06008F2			1		No Recovery Time > 500mA (Io)												650 V		0 ns	36 µA @ 650 V	-55°C ~ 175°C	18A
P3M06300T3	4.9800	RFQ	7695	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-220-2		SiCFET (Silicon Carbide)		TO-220-2L	download	ROHS3 Compliant	REACH Affected	4237-P3M06300T3			1			N-Channel	650 V	9A	15V	500mOhm @ 4.5A, 15V	2.2V @ 5mA		+20V, -8V		-	35W
P3D06010F2	4.1600	RFQ	5570	PN Junction Semiconductor	P3D	Tube	Active			TO-220F-2		SiC (Silicon Carbide) Schottky		TO-220F-2	download	ROHS3 Compliant	REACH Affected	4237-P3D06010F2			1		No Recovery Time > 500mA (Io)												650 V		0 ns	44 µA @ 650 V	-55°C ~ 175°C	21A
P3M173K0T3	5.0800	RFQ	8943	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-220-2		SiCFET (Silicon Carbide)		TO-220-2L	download	ROHS3 Compliant	REACH Affected	4237-P3M173K0T3	EAR99	8541.29.0095	1			N-Channel	1700 V	4A	15V	2.6Ohm @ 600mA, 15V	2.2V @ 600µA (Typ)		+19V, -8V		-	75W
P3M12025K4	28.7400	RFQ	30	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M12025K4			1			N-Channel	1200 V	112A	15V	35mOhm @ 50A, 15V	2.2V @ 50mA (Typ)		+19V, -8V		-	577W
P3D12020GS	12.4100	RFQ	9668	PN Junction Semiconductor	P3D	Tape & Reel (TR)	Active			TO-263S		SiC (Silicon Carbide) Schottky		TO-263S	download	ROHS3 Compliant	REACH Affected	4237-P3D12020GSTR			1		No Recovery Time > 500mA (Io)												1200 V		0 ns	60 µA @ 650 V	-55°C ~ 175°C	50A
P3M17040K4	35.8600	RFQ	4762	PN Junction Semiconductor	P3M	Tube	Active	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4		SiCFET (Silicon Carbide)		TO-247-4L	download	ROHS3 Compliant	REACH Affected	4237-P3M17040K4			1			N-Channel	1700 V	73A	15V	60mOhm @ 50A, 15V	2.2V @ 50mA (Typ)		+19V, -8V		-	536W

2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m²
In-stock Warehouse

Discrete Semiconductor Products(87)

2000+

30,000,000

2800+

15,000 m2

15,000 m²