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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1SS193,LF | 0.2200 |  |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS193 | Standard | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 3pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||
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SSM3K347R,LF | 0.4700 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3K347 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 38 V | 2A (Ta) | 4V, 10V | 340mOhm @ 1A, 10V | 2.4V @ 1mA | 2.5 nC @ 10 V | ±20V | 86 pF @ 10 V | - | 2W (Ta) | |||||||||||||||||||||||||||||||
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CUHS20F40,H3F | 0.3600 | |
36 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS20 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 540 mV @ 2 A | 60 µA @ 40 V | 150°C (Max) | 2A | 300pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
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2SC5095-O(TE85L,F) | - | |
3191 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC5095 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 13dB ~ 7dB | 10V | 15mA | NPN | 80 @ 7mA, 6V | 10GHz | 1.8dB @ 2GHz | |||||||||||||||||||||||||||||||||||
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RN1111,LF(CT | 0.0355 | |
4214 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1111 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 10 kOhms | |||||||||||||||||||||||||||||||||||
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RN4911,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4911 | 100mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz, 250MHz | 10kOhms | - | |||||||||||||||||||||||||||||||||||
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TPCC8104,L1Q(CM | - | |
2662 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1Q(CMTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | |||||||||||||||||||||||||||||||
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RN2901,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2901 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||||||
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GT50J121(Q) | - | |
6353 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | GT50J121 | Standard | 240 W | TO-3P(LH) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | 300V, 50A, 13Ohm, 15V | - | 600 V | 50 A | 100 A | 2.45V @ 15V, 50A | 1.3mJ (on), 1.34mJ (off) | 90ns/300ns | ||||||||||||||||||||||||||||||||||
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1SS406,H3F | 0.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | 1SS406 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | 125°C (Max) | 50mA | 3.9pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
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2SA1162-Y,LXHF | 0.3900 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||||||
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SSM3J36FS,LF | 0.2900 | |
479 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3J36 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 330mA (Ta) | 1.5V, 4.5V | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2 nC @ 4 V | ±8V | 43 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||||
|
RN2412,LF | 0.0309 | |
8990 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | - | ROHS3 Compliant | 264-RN2412,LFTR | 3,000 | ||||||||||||||||||||||||||||||||||||||||||||||||||
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2SC4682,T6F(J | - | |
4429 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC4682 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 15 V | 3 A | 1µA (ICBO) | NPN | 500mV @ 30mA, 3A | 800 @ 500mA, 1V | 150MHz | ||||||||||||||||||||||||||||||||||||
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TPC6009-H(TE85L,FM | - | |
2245 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6009 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7 nC @ 10 V | ±20V | 290 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||||||||||
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SSM3K341R,LF | 0.4500 | |
112 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K341 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.2W (Ta) | |||||||||||||||||||||||||||||||
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TPH3R506PL,LQ | 0.5263 | |
4366 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPH3R506PLLQTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | |||||||||||||||||||||||||||||||
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TPW1R104PB,L1XHQ | 2.2600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPW1R104 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||||||
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2SA949-Y,F(J | - | |
1766 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||
 |
RN1418,LF | 0.1800 | |
184 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1418 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||
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TK17E80W,S1X | 4.5900 | |
4719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | TK17E80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||||||||||||
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1SS416,L3M | 0.2700 | |
34 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-923 | 1SS416 | Schottky | SOD-923 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 15pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
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SSM5N16FUTE85LF | - | |
5880 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N16 | MOSFET (Metal Oxide) | 5-SSOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | - | ±10V | 9.3 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||||||||||
 |
2SK3127(TE24L,Q) | - | |
2581 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3127 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 45A (Ta) | 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 66 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 65W (Tc) | ||||||||||||||||||||||||||||||||
 |
TTC009,F(J | - | |
3543 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TTC009 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 80 V | 3 A | 100nA (ICBO) | NPN | 500mV @ 100mA, 1A | 100 @ 500mA, 5V | 150MHz | ||||||||||||||||||||||||||||||||||||
|
RN2402,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2402 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||
|
SSM5N15FU,LF | 0.4300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N15 | MOSFET (Metal Oxide) | 5-SSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | - | ±20V | 7.8 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||||||||||
 |
DSR01S30SC(TPL3) | - | |
1993 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 0201 (0603 Metric) | DSR01S30 | Schottky | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 620 mV @ 100 mA | 700 µA @ 30 V | 125°C (Max) | 100mA | 8.2pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
 |
RN1601(TE85L,F) | 0.4700 | |
6159 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1601 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||||||||||
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TRS16N65FB,S1F(S | - | |
5763 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS16N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | TRS16N65FBS1F(S | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 8A (DC) | 1.7 V @ 8 A | 0 ns | 90 µA @ 650 V | 175°C (Max) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
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