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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6N813R,LXHF | 0.7700 |  |
1 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6N813 | MOSFET (Metal Oxide) | 1.5W (Ta) | 6-TSOP-F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | Logic Level Gate, 4.5V Drive | ||||||||||||||||||||||||||||||
 |
SSM3K56CT,L3F | 0.4600 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TA) | Surface Mount | SC-101, SOT-883 | SSM3K56 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||
 |
SSM5H16TU,LF | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD (5 Leads), Flat Lead | SSM5H16 | MOSFET (Metal Oxide) | UFV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | |||||||||||||||||||||||||||
 |
SSM5H90ATU,LF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 5-SMD, Flat Leads | SSM5H90 | MOSFET (Metal Oxide) | UFV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 2.4A (Ta) | 2.5V, 4V | 65mOhm @ 1.5A, 4V | 1.2V @ 1mA | 2.2 nC @ 4 V | ±10V | 200 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||
 |
CES388,L3F | 0.2000 | |
52 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | CES388 | Schottky | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 40 V | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | 100mA | 25pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||
 |
TK17V65W,LQ | 3.4300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK17V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 17.3A (Ta) | 10V | 210mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 156W (Tc) | |||||||||||||||||||||||||||
 |
CMH05A(TE12L,Q,M) | - | |
6271 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMH05A | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.8 V @ 1 A | 35 ns | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||||
 |
XPH3R206NC,L1XHQ | 1.7500 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH3R206 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 70A (Ta) | 3.2mOhm @ 35A, 10V | 2.5V @ 500µA | 65 nC @ 10 V | ±20V | 4180 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||
 |
TK2R4A08QM,S4X | 2.8700 | |
46 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 179 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 47W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6H19NU,LF | 0.3700 | |
61 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | SSM6H19 | MOSFET (Metal Oxide) | 6-UDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 2A (Ta) | 1.8V, 8V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||
 |
TPCC8009,LQ(O | - | |
6494 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8009 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 24A (Ta) | 7mOhm @ 12A, 10V | 3V @ 200µA | 26 nC @ 10 V | 1270 pF @ 10 V | - | - | ||||||||||||||||||||||||||||||
 |
SSM6P15FU,LF | 0.3800 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6P15 | MOSFET (Metal Oxide) | 200mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | - | |||||||||||||||||||||||||||||
 |
RN1415,LF | 0.1800 | |
7792 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1415 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
 |
RN1110,LF(CT | 0.2000 | |
1031 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1110 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
SSM6K809R,LF | 0.7200 | |
5425 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6K809 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||||||||||
 |
TPCA8056-H,LQ(M | - | |
5127 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8056 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 48A (Ta) | 4.5V, 10V | 2.2mOhm @ 24A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6200 pF @ 10 V | - | 1.6W (Ta), 63W (Tc) | |||||||||||||||||||||||||||
 |
2SJ168TE85LF | 0.9000 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SJ168 | MOSFET (Metal Oxide) | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 60 V | 200mA (Ta) | 10V | 2Ohm @ 50mA, 10V | - | ±20V | 85 pF @ 10 V | - | 200mW (Ta) | ||||||||||||||||||||||||||||
|
RN2411,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2411 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||||||||||
 |
TK46E08N1,S1X | 1.2400 | |
6212 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK46E08 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 80A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 103W (Tc) | |||||||||||||||||||||||||||
|
RN2107,LXHF(CT | 0.3300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2107 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
 |
TRS6A65F,S1Q | 2.7600 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 Full Pack | TRS6A65 | SiC (Silicon Carbide) Schottky | TO-220F-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 6 A | 0 ns | 30 µA @ 650 V | 175°C (Max) | 6A | 22pF @ 650V, 1MHz | |||||||||||||||||||||||||||||||||
 |
TPC8066-H,LQ(S | - | |
9428 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8066 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 11A (Ta) | 4.5V, 10V | 16mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||
 |
TK5A50D(STA4,Q,M) | 1.2500 | |
48 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||||||
|
XPH4R714MC,L1XHQ | 1.7700 | |
53 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH4R714 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 60A (Ta) | 4.5V, 10V | 4.7mOhm @ 30A, 10V | 2.1V @ 1mA | 160 nC @ 10 V | +10V, -20V | 5640 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||
|
TDTC114E,LM | 0.1800 | |
5134 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC114 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 30 @ 5mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
|
RN2105,LXHF(CT | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2105 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
 |
SSM3K2615TU,LF | 0.5200 | |
12 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3K2615 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 800mW (Ta) | |||||||||||||||||||||||||||
|
RN2112ACT(TPL3) | 0.0527 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN2112 | 100 mW | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 100nA (ICBO) | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 1mA, 5V | 22 kOhms | ||||||||||||||||||||||||||||||||
 |
GT10J312(Q) | - | |
7639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | GT10J312 | Standard | 60 W | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 10A, 100Ohm, 15V | 200 ns | - | 600 V | 10 A | 20 A | 2.7V @ 15V, 10A | - | 400ns/400ns | |||||||||||||||||||||||||||||
|
RN4988,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4988 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 22kOhms | 47kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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