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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM6K818R,LF | 0.7000 |  |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K818 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 12mOhm @ 4A, 4.5V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.5W (Ta) | ||||||||||||||||||||||||||||
 |
1SV305,H3F | - | |
5855 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV305 | ESC | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | 6.6pF @ 4V, 1MHz | Single | 10 V | 3 | C1/C4 | - | |||||||||||||||||||||||||||||||||||
 |
TPCC8002-H(TE12L,Q | - | |
2822 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8002 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||||||||||
|
1SV311(TPH3,F) | 0.0886 | |
4129 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV311 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | 5.45pF @ 4V, 1MHz | Single | 10 V | 2.1 | C1/C4 | - | ||||||||||||||||||||||||||||||||||
 |
RN4985FE,LF(CT | 0.2400 | |
259 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4985 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||
 |
2SK2962(TE6,F,M) | - | |
1303 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2962 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 1A (Tj) | |||||||||||||||||||||||||||||||||||||||||
 |
DSR01S30SC,L3F | - | |
2781 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 0201 (0603 Metric) | DSR01S30 | Schottky | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 620 mV @ 100 mA | 700 µA @ 30 V | 125°C (Max) | 100mA | 8.2pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
|
2SK3670,F(M | - | |
2389 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | 2SK3670F(M | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | ||||||||||||||||||||||||||||||||||||||||
 |
TPC8018-H(TE12LQM) | - | |
5235 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8018 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 4.6mOhm @ 9A, 10V | 2.3V @ 1mA | 38 nC @ 10 V | ±20V | 2265 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
 |
RN1405,LF | 0.2100 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1405 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
 |
U1GWJ49(TE12L,F) | - | |
1338 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-243AA | U1GWJ49 | Schottky | PW-MINI | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 1 A | 500 µA @ 40 V | -40°C ~ 125°C | 1A | - | ||||||||||||||||||||||||||||||||||
|
2SC2235-O(T6FJT,FM | - | |
6710 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||
|
2SA965-Y(T6CANO,FM | - | |
3779 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||
|
2SA1020-Y,F(J | - | |
8744 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
 |
2SC5200N(S1,E,S) | 2.2100 | |
3081 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SC5200 | 150 W | TO-3P(N) | download | ROHS3 Compliant | Not Applicable | 2SC5200N(S1ES) | EAR99 | 8541.29.0075 | 25 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||||||||
 |
2SK3566(STA4,Q,M) | 1.6700 | |
955 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3566 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||||||||
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RN1107MFV,L3XHF(CT | 0.3400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1107 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
|
TK3A65DA(STA4,QM) | 1.5200 | |
4118 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6K514NU,LF | 0.4700 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K514 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 12A (Ta) | 4.5V, 10V | 11.6mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1110 pF @ 20 V | - | 2.5W (Ta) | ||||||||||||||||||||||||||||
 |
SSM3K36FS,LF | 0.2900 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K36 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23 nC @ 4 V | ±10V | 46 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||
|
RN1962FE(TE85L,F) | 0.1500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1962 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||
 |
TK5Q60W,S1VQ | 1.8600 | |
2135 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK5Q60 | MOSFET (Metal Oxide) | I-Pak | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||||||
|
1SS424(TPL3,F) | 0.2200 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS424 | Schottky | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 500 mV @ 200 mA | 50 µA @ 20 V | 125°C (Max) | 200mA | 20pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
 |
SSM6N15AFU,LF | 0.3500 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N15 | MOSFET (Metal Oxide) | 300mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | Logic Level Gate | ||||||||||||||||||||||||||||||
 |
RN1307,LXHF | 0.3900 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1307 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
 |
TPN7R006PL,L1Q | 0.9100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN7R006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 54A (Tc) | 4.5V, 10V | 7mOhm @ 27A, 10V | 2.5V @ 200µA | 20 nC @ 10 V | ±20V | 1875 pF @ 30 V | - | 630mW (Ta), 75W (Tc) | |||||||||||||||||||||||||||||
 |
TK110E65Z,S1X | 4.3100 | |
129 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||||||||||||
 |
TRS20N65FB,S1F(S | - | |
1932 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS20N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | TRS20N65FBS1F(S | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 10A (DC) | 1.7 V @ 10 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | |||||||||||||||||||||||||||||||
|
RN1442ATE85LF | - | |
4776 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1442 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20 V | 300 mA | 100nA (ICBO) | NPN - Pre-Biased | 100mV @ 3mA, 30mA | 200 @ 4mA, 2V | 30 MHz | 10 kOhms | |||||||||||||||||||||||||||||||||
|
SSM6L36FE,LM | 0.4500 | |
108 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6L36 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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