Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
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2SC2655-Y(T6TOJ,FM | - | ![]() |
5228 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
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2SD1223,L1XGQ(O | - | ![]() |
3909 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | 2SD1223 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | ||||||||||||||||||||||||||||||||||||||||||||
CMS11(TE12L) | - | ![]() |
4213 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-128 | CMS11 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 2 A | 500 µA @ 40 V | -40°C ~ 150°C | 2A | - | ||||||||||||||||||||||||||||||||||
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TK30S06K3L(T6L1,NQ | - | ![]() |
1314 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK30S06 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 30A (Ta) | 6V, 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 28 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 58W (Tc) | ||||||||||||||||||||||||||||
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1SS384TE85LF | 0.4200 | ![]() |
16 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-82 | 1SS384 | Schottky | USQ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 10 V | 100mA | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | |||||||||||||||||||||||||||||||||
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2SC5084-O(TE85L,F) | - | ![]() |
3160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC5084 | 150mW | S-Mini | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 11dB | 12V | 80mA | NPN | 80 @ 20mA, 10V | 7GHz | 1.1dB @ 1GHz | ||||||||||||||||||||||||||||||||
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TK25E60X,S1X | 4.4100 | ![]() |
13 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK25E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||
CRS30I40A(TE85L,QM | 0.4400 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS30I40 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 3 A | 100 µA @ 40 V | 150°C (Max) | 3A | 62pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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SSM3K7002BS,LF | - | ![]() |
5298 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K7002 | MOSFET (Metal Oxide) | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250µA | ±20V | 17 pF @ 25 V | - | 200mW (Ta) | ||||||||||||||||||||||||||||||
CRS08(TE85L,Q,M) | 0.5200 | ![]() |
29 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS08 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 360 mV @ 1.5 A | 1 mA @ 30 V | -40°C ~ 125°C | 1.5A | 90pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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TPC8109(TE12L) | - | ![]() |
2232 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8109 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 10A (Ta) | 20mOhm @ 5A, 10V | 2V @ 1mA | 45 nC @ 10 V | 2260 pF @ 10 V | - | ||||||||||||||||||||||||||||||||
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CLS01,LFJFQ(O | - | ![]() |
1100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS01 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 10 A | 1 mA @ 30 V | -40°C ~ 125°C | 10A | 530pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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TPW1R306PL,L1Q | 3.0600 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPW1R306 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 260A (Tc) | 4.5V, 10V | 1.29mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||
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TPC6503(TE85L,F,M) | - | ![]() |
1614 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6503 | 1.6 W | VS-6 (2.9x2.8) | - | RoHS Compliant | TPC6503(TE85LFM) | EAR99 | 8541.29.0095 | 3,000 | 30 V | 1.5 A | 100nA (ICBO) | NPN | 120mV @ 10mA, 500mA | 400 @ 150mA, 2V | - | ||||||||||||||||||||||||||||||||
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TK28N65W,S1F | 6.3000 | ![]() |
30 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||
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TTC011B,Q(S | - | ![]() |
1962 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tube | Active | TTC011 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0075 | 250 | ||||||||||||||||||||||||||||||||||||||||||||
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1SV310TPH3F | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV310 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | 5.45pF @ 4V, 1MHz | Single | 10 V | 2.1 | C1/C4 | - | ||||||||||||||||||||||||||||||||||
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TK4A65DA(STA4,Q,M) | - | ![]() |
7758 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A65 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 3.5A (Ta) | 10V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||
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RN1108ACT(TPL3) | - | ![]() |
7969 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1108 | 100 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
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RN2909,LF(CT | 0.2800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2909 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||||||
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RN4987,LF(CT | 0.3500 | ![]() |
4365 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4987 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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2SC4116-Y,LXHF | 0.3300 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||
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TK13A65U(STA4,Q,M) | - | ![]() |
1833 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A65 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 650 V | 13A (Ta) | 10V | 380mOhm @ 6.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||||||||
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TK6A65W,S5X | 1.7300 | ![]() |
4293 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||
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TPCP8701(TE85L,F,M | - | ![]() |
5797 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8701 | 1.77W | PS-8 | download | RoHS Compliant | 1 (Unlimited) | TPCP8701(TE85LFM | EAR99 | 8541.29.0095 | 3,000 | 80V | 3A | 100nA (ICBO) | 2 NPN (Dual) | 140mV @ 20mA, 1A | 400 @ 300mA, 2V | - | |||||||||||||||||||||||||||||||
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RN2113CT(TPL3) | - | ![]() |
6661 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2113 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 47 kOhms | ||||||||||||||||||||||||||||||||||
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2SC2655-Y,T6SWFF(M | - | ![]() |
8656 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
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RN2305,LF | 0.1800 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2305 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
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TJ90S04M3L,LXHQ | 1.6300 | ![]() |
3061 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ90S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 90A (Ta) | 4.5V, 10V | 4.3mOhm @ 45A, 10V | 2V @ 1mA | 172 nC @ 10 V | +10V, -20V | 7700 pF @ 10 V | - | 180W (Tc) | |||||||||||||||||||||||||||||
CRS03(TE85L,Q,M) | 0.3900 | ![]() |
31 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS03 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 1 A | 100 µA @ 30 V | -40°C ~ 150°C | 1A | 40pF @ 10V, 1MHz |
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