- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SC2229-Y(T6MITIFM | - |  |
7080 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | 2SC2229YT6MITIFM | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||
 |
SSM3K302T(TE85L,F) | - | |
9175 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K302 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 3A (Ta) | 1.8V, 4V | 71mOhm @ 2A, 4V | - | 4.3 nC @ 4 V | ±12V | 270 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||
 |
TK7A65W,S5X | 1.6700 | |
2976 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||||
 |
TK8A60DA(STA4,Q,M) | - | |
1362 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||
 |
TPC8407,LQ(S | - | |
5590 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8407 | MOSFET (Metal Oxide) | 450mW | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 2,500 | N and P-Channel | 30V | 9A, 7.4A | 17mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||
 |
RN2405,LF | 0.2200 | |
1371 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2405 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||
 |
2SJ304(F) | - | |
2391 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SJ304 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | P-Channel | 60 V | 14A (Ta) | 4V, 10V | 120mOhm @ 7A, 10V | 2V @ 1mA | 45 nC @ 10 V | ±20V | 1200 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||||
|
TK11A60D(STA4,Q,M) | - | |
6517 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||
 |
2SK2719(F) | - | |
7516 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2719 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 125W (Tc) | ||||||||||||||||||||||||
 |
2SK1828TE85LF | 0.3800 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK1828 | MOSFET (Metal Oxide) | SC-59 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | 1.5V @ 100µA | 10V | 5.5 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||
 |
RN2302,LF | 0.0379 | |
2065 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2302 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||
 |
TPCA8005-H(TE12LQM | - | |
1160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8005 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 27A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.3V @ 1mA | 24 nC @ 10 V | ±20V | 1395 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||||||||||
 |
RN2107ACT(TPL3) | - | |
7491 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2107 | 100 mW | CST3 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||
 |
CRS10I40B(TE85L,QM | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS10I40 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 450 mV @ 1 A | 100 µA @ 40 V | 150°C (Max) | 1A | 62pF @ 10V, 1MHz | ||||||||||||||||||||||||||||
 |
TW070J120B,S1Q | 32.4200 | |
104 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | -55°C ~ 175°C | Through Hole | TO-3P-3, SC-65-3 | TW070J120 | SiCFET (Silicon Carbide) | TO-3P(N) | download | 1 (Unlimited) | 264-TW070J120BS1Q | EAR99 | 8541.29.0095 | 25 | N-Channel | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | Standard | 272W (Tc) | |||||||||||||||||||||||
 |
RN2102MFV,L3F(CT | 0.1800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2102 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||
 |
RN4601(TE85L,F) | 0.4800 | |
548 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4601 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||
 |
TJ60S04M3L(T6L1,NQ | 1.4000 | |
6560 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ60S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 60A (Ta) | 6V, 10V | 6.3mOhm @ 30A, 10V | 3V @ 1mA | 125 nC @ 10 V | +10V, -20V | 6510 pF @ 10 V | - | 90W (Tc) | |||||||||||||||||||||||
|
RN2608(TE85L,F) | 0.4700 | |
8298 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2608 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||
|
1SS393SU,LF | 0.4000 | |
180 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS393 | Schottky | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 40 V | 100mA | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | ||||||||||||||||||||||||||||
|
2SC2712-BL,LF | 0.2000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2712 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 70 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||
 |
1SS382TE85LF | 0.4900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-82 | 1SS382 | Standard | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | ||||||||||||||||||||||||||||
|
2SA1312-BL(TE85L,F | 0.3300 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1312 | 150 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 1mA, 10mA | 350 @ 2mA, 6V | 100MHz | |||||||||||||||||||||||||||
|
CMS20I30A(TE12L,QM | 0.5800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS20 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 2 A | 100 µA @ 30 V | 150°C (Max) | 2A | 82pF @ 10V, 1MHz | ||||||||||||||||||||||||||||
|
2SC6026MFVGR,L3F | 0.2000 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SC6026 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 60MHz | |||||||||||||||||||||||||||
|
TK8A50DA(STA4,Q,M) | 1.6000 | |
2557 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||
|
2SC2655-Y(6MBH1,AF | - | |
2308 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
SSM3J371R,LF | 0.4700 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J371 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | +6V, -8V | 630 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||
 |
TPC6010-H(TE85L,FM | - | |
7814 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6010 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12 nC @ 10 V | ±20V | 830 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||
 |
TPC8212-H(TE12LQ,M | - | |
9667 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8212 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 6A | 21mOhm @ 3A, 10V | 2.3V @ 1mA | 16nC @ 10V | 840pF @ 10V | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)